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Passivated contacts to n+ and p+ silicon based on amorphous silicon and thin dielectrics

Bullock, James; Yan, Di; Cuevas, Andres; Demaurex, Benedicte; Hessler-Wyser, Aicha; De Wolf, Stefaan


Carrier recombination at the metal contact regions has now become a critical obstacle to the advancement of high efficiency diffused junction silicon solar cells. The insertion of a thin dielectric interlayer - forming a metal-insulator-semiconductor (MIS) contact - is a known approach to reduce contact recombination. However, an insulator thickness less than 25 Å is usually required for current transport, making it difficult to simultaneously achieve good surface passivation. This paper...[Show more]

CollectionsANU Research Publications
Date published: 2014
Type: Conference paper
Source: 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
DOI: 10.1109/PVSC.2014.6925674


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