Passivated contacts to n+ and p+ silicon based on amorphous silicon and thin dielectrics
Carrier recombination at the metal contact regions has now become a critical obstacle to the advancement of high efficiency diffused junction silicon solar cells. The insertion of a thin dielectric interlayer - forming a metal-insulator-semiconductor (MIS) contact - is a known approach to reduce contact recombination. However, an insulator thickness less than 25 Å is usually required for current transport, making it difficult to simultaneously achieve good surface passivation. This paper...[Show more]
|Collections||ANU Research Publications|
|Source:||2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014|
|01_Bullock_Passivated_contacts_to_n+_and_2014.pdf||917.63 kB||Adobe PDF||Request a copy|
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