Skip navigation
Skip navigation

Passivated contacts to n+ and p+ silicon based on amorphous silicon and thin dielectrics

Bullock, James; Yan, Di; Cuevas, Andres; Demaurex, Benedicte; Hessler-Wyser, Aicha; De Wolf, Stefaan


Carrier recombination at the metal contact regions has now become a critical obstacle to the advancement of high efficiency diffused junction silicon solar cells. The insertion of a thin dielectric interlayer - forming a metal-insulator-semiconductor (MIS) contact - is a known approach to reduce contact recombination. However, an insulator thickness less than 25 Å is usually required for current transport, making it difficult to simultaneously achieve good surface passivation. This paper...[Show more]

CollectionsANU Research Publications
Date published: 2014
Type: Conference paper
Source: 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
DOI: 10.1109/PVSC.2014.6925674


File Description SizeFormat Image
01_Bullock_Passivated_contacts_to_n+_and_2014.pdf917.63 kBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator