Bullock, James; Yan, Di; Cuevas, Andres; Demaurex, Benedicte; Hessler-Wyser, Aicha; De Wolf, Stefaan
Carrier recombination at the metal contact regions has now become a critical obstacle to the advancement of high efficiency diffused junction silicon solar cells. The insertion of a thin dielectric interlayer - forming a metal-insulator-semiconductor (MIS) contact - is a known approach to reduce contact recombination. However, an insulator thickness less than 25 Å is usually required for current transport, making it difficult to simultaneously achieve good surface passivation. This paper...[Show more]
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