Growth and Characterisation of InAs/GaAs Quantum Dots grown by MOCVD
Date
2005
Authors
Stewart Sears, Kalista
Wong-Leung, Jennifer
Buda, Manuela
Jagadish, Chennupati
Tan, Hark Hoe
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE Inc)
Abstract
InAs/GaAs quantum dots (QDs) were grown by low pressure Metal-Organic Chemical Vapour Deposition in the Stranski-Krastanow growth mode. We describe the influence of growth parameters such as coverage, the V/III ratio, growth temperature and growth interrupts on the QD nucleation and the importance of avoiding formation of larger islands which are particularly susceptible to dislocations. After an extensive study of these growth parameters we are now able to achieve device quality InAs/GaAs QDs with a density of 3×10 10cm-2. Three layers of these QDs have been incorporated into a thin p-clad laser structure which lases from an excited state due to high absorption loss and insufficient ground state gain.
Description
Keywords
Keywords: Chemical vapor deposition; Ecology; Epitaxial growth; Ion beam assisted deposition; Metals; Optical waveguides; Organic chemicals; Organic compounds; Quantum electronics; characterisation; Chemical vapour deposition; Device-quality; Growth parameters; InA
Citation
Collections
Source
2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings
Type
Conference paper