Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors using selective-area intermixing
Date
2010
Authors
McKerracher, Ian
Wong-Leung, Jennifer
Jolley, Greg
Fu, Lan
Jagadish, Chennupati
Tan, Hark Hoe
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE Inc)
Abstract
Quantum dot intermixing is a post-growth approach to tuning optoelectronic devices. SiO2 capping layers can enhance these effects through impurityfree vacancy disordering, whereas TiO2 caps can decrease intermixing. In this study, multi-colour quantum dot infrared photodetectors were fabricated through selective intermixing and four different encapsulants were investigated.
Description
Keywords
Keywords: Capping layer; Encapsulants; Impurity free vacancy disordering; InGaAs/GaAs; Quantum dot infrared photodetector; Quantum dot intermixing; Selective intermixing; Spectral tuning; TiO; Infrared detectors; Microelectronics; Mixing; Optoelectronic devices; Se
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Source
2010 conference on Optoelectronic and Microelectronic Materials and Devices Proceedings
Type
Conference paper