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Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors using selective-area intermixing

McKerracher, Ian; Wong-Leung, Yin-Yin (Jennifer); Jolley, Greg; Fu, Lan; Jagadish, Chennupati; Tan, Hark Hoe


Quantum dot intermixing is a post-growth approach to tuning optoelectronic devices. SiO2 capping layers can enhance these effects through impurityfree vacancy disordering, whereas TiO2 caps can decrease intermixing. In this study, multi-colour quantum dot infrared photodetectors were fabricated through selective intermixing and four different encapsulants were investigated.

CollectionsANU Research Publications
Date published: 2010
Type: Conference paper
Source: 2010 conference on Optoelectronic and Microelectronic Materials and Devices Proceedings
DOI: 10.1109/COMMAD.2010.5699773


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