Emission wavelength extension of mid-infrared InAsSb/InP nanostructures using InGaAsSb sandwich layers
This paper presents a study on the emission wavelength extension of InAsSb nanostructures using InGaAsSb sandwich layers. Due to the reduced lattice mismatch between InAsSb nanostructure layer and buffer/capping layer, the introduction of InGaAsSb sandwich layers leads to larger island size, reduced compressive strain and lower confinement barrier for InAsSb nanostructures, thus resulting in a longer emission wavelength. For InGaAsSb sandwich layers with nominal Sb concentration higher than...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Physics D: Applied Physics|
|01_Lei_Emission_wavelength_extension_2010.pdf||940.71 kB||Adobe PDF||Request a copy|
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