Lei, Wen; Tan, Hoe Hark; Jagadish, Chennupati
This paper presents a study on the emission wavelength extension of InAsSb nanostructures using InGaAsSb sandwich layers. Due to the reduced lattice mismatch between InAsSb nanostructure layer and buffer/capping layer, the introduction of InGaAsSb sandwich layers leads to larger island size, reduced compressive strain and lower confinement barrier for InAsSb nanostructures, thus resulting in a longer emission wavelength. For InGaAsSb sandwich layers with nominal Sb concentration higher than...[Show more]
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.