Controlled lateral growth of silica nanowire
Date
2010
Authors
Kim, Tae-Hyun
Shalav, Avi
Elliman, Robert
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Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE Inc)
Abstract
This study investigates the controlled lateral growth of amorphous silica nanowires using the Si active oxidation as the dominant SiO vapour precursor for nanowire growth. The development of complex multi-layered core shell nanowire structures using a combination of both active Si oxidation and secondary coating techniques is also demonstrated.
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Keywords
Keywords: Amorphous silica; Lateral growth; Multi-layered; Nanowire growth; Si oxidation; Silica nano wires; Amorphous silicon; Microelectronics; Oxidation; Silica; Nanowires
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2010 conference on Optoelectronic and Microelectronic Materials and Devices Proceedings
Type
Conference paper
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2037-12-31
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