Controlled lateral growth of silica nanowire
This study investigates the controlled lateral growth of amorphous silica nanowires using the Si active oxidation as the dominant SiO vapour precursor for nanowire growth. The development of complex multi-layered core shell nanowire structures using a combination of both active Si oxidation and secondary coating techniques is also demonstrated.
|Collections||ANU Research Publications|
|Source:||2010 conference on Optoelectronic and Microelectronic Materials and Devices Proceedings|
|01_Kim_Controlled_lateral_growth_of_2010.pdf||1.27 MB||Adobe PDF||Request a copy|
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