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Stressed multidirectional solid-phase epitaxial growth of Si

Rudawski, N G; Jones, K S; Morarka, S; Law, M E; Elliman, Robert

Description

The study of the solid-phase epitaxial growth (SPEG) process of Si (variously referred to as solid-phase epitaxy, solid-phase epitaxial regrowth, solid-phase epitaxial crystallization, and solid-phase epitaxial recrystallization) amorphized via ion implantation has been a topic of fundamental and technological importance for several decades. Overwhelmingly, SPEG has been studied (and viewed) as a single-directional process where an advancing growth front between amorphous and crystalline Si...[Show more]

CollectionsANU Research Publications
Date published: 2009
Type: Journal article
URI: http://hdl.handle.net/1885/51014
Source: Journal of Applied Physics
DOI: 10.1063/1.3091395

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