Characterisation of defects in electron irradiated Ga-or B-doped CZ Silicon using Laplace DLTS
Date
2005
Authors
Deenapanray, P.N.K
Nyamhere, Cloud
Auret, F.D
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WIP-Renewable Energies
Abstract
We have measured the electrical and annealing properties of defects created in Czochralski grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace(L)-DLTS. With L-DLTS, we have been able to resolve several defects that cannot be resolved using conventional DLTS. L-DLTS provides a new avenue to study defect introduction rates and annealing kinetics in B- and Ga-doped Si. The isochronal annealing behaviour of the defects was also investigated.
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Keywords
CzochralskiSi, Laplace DLTS, Gallium doping, defect introduction rates
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Proceedings of the 20th European Photovoltaic Solar Energy Conference
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Conference paper
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