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Characterisation of defects in electron irradiated Ga-or B-doped CZ Silicon using Laplace DLTS

Deenapanray, P.N.K; Nyamhere, Cloud; Auret, F.D


We have measured the electrical and annealing properties of defects created in Czochralski grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace(L)-DLTS. With L-DLTS, we have been able to resolve several defects that cannot be resolved using conventional DLTS. L-DLTS provides a new avenue to study defect introduction rates and annealing kinetics in B- and Ga-doped Si. The isochronal annealing behaviour of the defects was also investigated.

CollectionsANU Research Publications
Date published: 2005
Type: Conference paper
Source: Proceedings of the 20th European Photovoltaic Solar Energy Conference


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