Characterisation of defects in electron irradiated Ga-or B-doped CZ Silicon using Laplace DLTS
We have measured the electrical and annealing properties of defects created in Czochralski grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace(L)-DLTS. With L-DLTS, we have been able to resolve several defects that cannot be resolved using conventional DLTS. L-DLTS provides a new avenue to study defect introduction rates and annealing kinetics in B- and Ga-doped Si. The isochronal annealing behaviour of the defects was also investigated.
|Collections||ANU Research Publications|
|Source:||Proceedings of the 20th European Photovoltaic Solar Energy Conference|
|2CV_5_23.PDF||91.27 kB||Adobe PDF|
|3171-01.2005-07-20T01:41:05Z.xsh||353 B||EPrints MD5 Hash XML|
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