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Room-temperature operation of InGaAsN quantum dot lasers grown by metalorganic chemical vapor deposition

Gao, Q; Buda, Manuela; Jagadish, Chennupati; Tan, Hark Hoe

Description

An InGaAsN single-layer-QD laser structure was grown on GaAs substrates by metalorganic chemical vapor deposition. The ridge-waveguide edge emitting laser diodes (LD) were fabricated and characterized. We demonstrate room-temperature operation of InGaAsN QD lasers with an emission wavelength of 1078 nm. Electroluminescence spectra as a function of injection current showed that InGaAsN QD LDs lased from an excited QD state at RT. The evidence for QD-related absorption was obtained from the...[Show more]

CollectionsANU Research Publications
Date published: 2005
Type: Journal article
URI: http://hdl.handle.net/1885/43095

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