Skip navigation
Skip navigation

Room-temperature operation of InGaAsN quantum dot lasers grown by metalorganic chemical vapor deposition

Gao, Q; Buda, M; Tan, Hoe Hark; Jagadish, Chennupati


An InGaAsN single-layer-QD laser structure was grown on GaAs substrates by metalorganic chemical vapor deposition. The ridge-waveguide edge emitting laser diodes (LD) were fabricated and characterized. We demonstrate room-temperature operation of InGaAsN QD lasers with an emission wavelength of 1078 nm. Electroluminescence spectra as a function of injection current showed that InGaAsN QD LDs lased from an excited QD state at RT. The evidence for QD-related absorption was obtained from the...[Show more]

CollectionsANU Research Publications
Date published: 2005
Type: Journal article


File Description SizeFormat Image
ESL-QD_laser-Gao-000G57[1].pdf358.36 kBAdobe PDFThumbnail
3338-01.2006-01-16T22:29:17Z.xsh371 BEPrints MD5 Hash XML

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator