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Highest-quality surface passivation of low-resistivity p-type silicon using stoichiometric PECVD silicon nitride

Schmidt, Jan; Kerr, Mark John

Description

The surface passivation properties of silicon nitride (SiN) films fabricated by high-frequency direct plasma-enhanced chemical vapour deposition (PECVD) on low-resistivity (1 &cm) p-type silicon solar cell substrates have been investigated. The process gases used were ammonia and a mixture of silane and nitrogen. In order to find the optimum set of SiN deposition parameters, a large number of carrier lifetime test structures were prepared under different deposition conditions. The optimised...[Show more]

CollectionsANU Research Publications
Date published: 1999
Type: Conference paper
URI: http://hdl.handle.net/1885/40869
http://digitalcollections.anu.edu.au/handle/1885/40869
Source: Solar Energy Materials and Solar Cells

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