Highest-quality surface passivation of low-resistivity p-type silicon using stoichiometric PECVD silicon nitride
The surface passivation properties of silicon nitride (SiN) films fabricated by high-frequency direct plasma-enhanced chemical vapour deposition (PECVD) on low-resistivity (1 &cm) p-type silicon solar cell substrates have been investigated. The process gases used were ammonia and a mixture of silane and nitrogen. In order to find the optimum set of SiN deposition parameters, a large number of carrier lifetime test structures were prepared under different deposition conditions. The optimised...[Show more]
|Collections||ANU Research Publications|
|Source:||Solar Energy Materials and Solar Cells|
|1889-01.2003-08-15T06:51:08Z.xsh||357 B||EPrints MD5 Hash XML|
|Japan_paper3.pdf||80.97 kB||Adobe PDF|
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