Impurity-free vacancy disordering of quantum heterostructures with SiOxNy encapsulants deposited by magnetron sputtering
Date
2008
Authors
McKerracher, Ian
Fu, Lan
Jagadish, Chennupati
Tan, Hark Hoe
Journal Title
Journal ISSN
Volume Title
Publisher
SPIE - The International Society for Optical Engineering
Abstract
Post-growth techniques such as impurity-free vacancy disordering (IFVD) are simple and effective avenues to monolithic integration of optoelectonic components. Sputter deposition of encapsulant films can enhance quantum well intermixing through IFVD and an additional mechanism involving surface damage during the sputtering process. In this study, these two mechanisms were compared in a multi-quantum well structure. The compositions of different silicon oxy-nitride films were controlled by sputter deposition in different ambient gases. These different encapsulants were used to initiate IFVD in the same heterostructure and the observed intermixing is compared to the film properties.
Description
Keywords
Keywords: Heterojunctions; Magnetron sputtering; Mixing; Monolithic integrated circuits; Nitrides; Semiconductor device structures; Semiconductor quantum wires; Silicon; Sputter deposition; Vacancies; Ambient gases; Encapsulant; Encapsulants; Film properties; Free Impurity-free vacancy disordering; Intermixing; Quantum well; Sputter deposition
Citation
Collections
Source
PROCEEDINGS OF SPIE, Volume 7039 Nanoengineering: Fabrication, Properties, Optics, and Devices V
Type
Conference paper