Thin film deposition of Ge33As12 Se55 by pulsed laser deposition and thermal evaporation: comparison of properties
Date
2007
Authors
Jarvis, Ruth
Wang, Rongping
Rode, Andrei V
Zha, Congji
Luther-Davies, Barry
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Elsevier
Abstract
Thin films of Ge33As12Se55 were produced using two deposition techniques, ultra-fast pulsed laser deposition (UFPLD) and thermal evaporation (TE), and their properties have been investigated. The chemical composition of the UFPLD films was virtually identical to the composition of the chalcogenide glass targets, whereas the composition of films deposited by TE was significantly different from the target material. Heating of the substrate with a temperature gradient during deposition produced a gradient in composition in both UFPLD and TE films.
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Keywords
Keywords: Arsenic; Chalcogenides; Dielectric properties; Germanium; Pulsed laser deposition; Raman spectroscopy; Selenium; Thermal evaporation; Film composition; Laser deposition; Ultra fast pulsed laser deposition; Thin films Chalcogenides; Composition; Dielectric properties; Ge33As12Se55; Laser deposition; Raman spectroscopy; Thermal evaporation; Thin films
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Source
Journal of Non-crystalline Solids
Type
Journal article
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2037-12-31
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