Plasmonic light trapping effect on properties of InGaAs/GaAs quantum dot solar cells
Date
2011
Authors
Fu, Lan
Lu, Hao Feng
Mokkapati, Sudha
Jolley, Greg
Jagadish, Chennupati
Tan, Hark Hoe
Journal Title
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Volume Title
Publisher
IEEE Photonics Society
Abstract
We demonstrate that plasmonic light trapping effect can be used to improve all the main device characteristics of self-assembled InGaAs/GaAs quantum dot solar cell. The underlying physical processes of carrier occupation, transportation, and recombination within the plasmonic quantum dot solar cells will be discussed.
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Keywords
Keywords: Device characteristics; InGaAs/GaAs; Light trapping effects; Physical process; Plasmonic; Quantum dot solar cells; Self-assembled; Semiconductor quantum dots; Plasmons
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Highly efficient color filter based on a subwavelength metal grating integrated with a dielectric monolayer
Type
Conference paper
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2037-12-31
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