Plasmonic light trapping effect on properties of InGaAs/GaAs quantum dot solar cells
We demonstrate that plasmonic light trapping effect can be used to improve all the main device characteristics of self-assembled InGaAs/GaAs quantum dot solar cell. The underlying physical processes of carrier occupation, transportation, and recombination within the plasmonic quantum dot solar cells will be discussed.
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|Source:||Highly efficient color filter based on a subwavelength metal grating integrated with a dielectric monolayer|
|01_Fu_Plasmonic_light_trapping_2011.pdf||190.59 kB||Adobe PDF||Request a copy|
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