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Plasmonic light trapping effect on properties of InGaAs/GaAs quantum dot solar cells

Fu, Lan; Lu, Hao Feng; Mokkapati, Sudha; Jolley, Greg; Jagadish, Chennupati; Tan, Hark Hoe


We demonstrate that plasmonic light trapping effect can be used to improve all the main device characteristics of self-assembled InGaAs/GaAs quantum dot solar cell. The underlying physical processes of carrier occupation, transportation, and recombination within the plasmonic quantum dot solar cells will be discussed.

CollectionsANU Research Publications
Date published: 2011
Type: Conference paper
Source: Highly efficient color filter based on a subwavelength metal grating integrated with a dielectric monolayer
DOI: 10.1109/PHO.2011.6110590


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