Phosphorus-doped polycrystalline silicon passivating contacts via spin-on doping
Date
2021
Authors
Ding, Zetao
Yan, Di
Stuckelberger, Josua
Phang, Pheng
Chen, Wenhao
Samundsett, Christian
Yang, Jie
Wang, Zhao
Zheng, Peiting
Zhang, Xinyu
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
Polycrystalline silicon (poly-Si) passivating contacts are promising technologies to promote the efficiency of silicon solar cells, due to their low carrier recombination and low contact resistivity. In this work, we present phosphorus spin-on doping as an alternative doping method to fabricate high performance poly-Si passivating contacts. The influences of thermal treatments and intrinsic amorphous Si thickness on poly-Si passivating contact quality were investigated. A high implied open-circuit voltage of above 730 mV together with a low contact resistivity below 4 mΩ⋅cm2 were obtained for 100 – 230 nm thick poly-Si layers after a thermal treatment at 975 °C for 60 min followed by a forming gas annealing. The promising results presented in this work imply that phosphorus spin-on doping can be an effective doping method alternative to conventional POCl3 diffusion.
Description
Keywords
Spin-on doping, Liquid doping, Ex-situ doping, Phosphorus, n-type, Polycrystalline silicon, PolySi, Poly-Si, Passivating contact, TOPCon, POLO, Solar cell
Citation
Collections
Source
Solar Energy Materials and Solar Cells
Type
Journal article
Book Title
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Restricted until
2099-12-31