Characterization of Laser Ablated GaN/ZnO Bilayer on Si(111)
Date
2003
Authors
Wang, Rongping
Muto, H
Journal Title
Journal ISSN
Volume Title
Publisher
Scientific.Net
Abstract
We have fabricated ZnO and GaN bilayers on silicon (111) wafers by laser ablation in order to develop the preparation techniques of multi-layer devices in optoelectronics. X-ray diffraction patterns showed the film was c-axis oriented vertical to the substrate plane. Scanning electron microscopic images indicated that the surface morphology was improved with increasing deposition temperature. E1(TO) phonon modes of ZnO and GaN, as observed by infrared reflectance measurements, were clearly observed in such bilayers, giving evidence of the presence of GaN films. All these results confirm that the laser ablation method using inactivated N2 flow and a solid-state target is a suitable approach to prepare high quality GaN films.
Description
Keywords
Keywords: Gallium nitride; Laser ablation; Morphology; Optoelectronic devices; Phonons; Scanning electron microscopy; X ray diffraction analysis; Zinc oxide; Multilayer devices; Semiconducting silicon Gallium Nitride; Infrared Reflectance; Laser Ablation; Thin-Film; Zink Oxide
Citation
Collections
Source
Solid State Phenomena
Type
Journal article