Characterization of Laser Ablated GaN/ZnO Bilayer on Si(111)
We have fabricated ZnO and GaN bilayers on silicon (111) wafers by laser ablation in order to develop the preparation techniques of multi-layer devices in optoelectronics. X-ray diffraction patterns showed the film was c-axis oriented vertical to the substrate plane. Scanning electron microscopic images indicated that the surface morphology was improved with increasing deposition temperature. E1(TO) phonon modes of ZnO and GaN, as observed by infrared reflectance measurements, were clearly...[Show more]
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|Source:||Solid State Phenomena|
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