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Passivation of aluminium-n + silicon contacts for solar cells by ultrathin Al 2 O3 and SiO 2 dielectric layers

Bullock, James; Yang, Di; Cuevas, Andres

Description

Ultra-thin thermally grown SiO2 and atomic-layer-deposited (ALD) Al2O3 films are trialled as passivating dielectrics for metal-insulator-semiconductor (MIS) type contacts on top of phosphorus diffused regions applicable to high efficiency silicon solar ce

CollectionsANU Research Publications
Date published: 2013
Type: Journal article
URI: http://hdl.handle.net/1885/30158
Source: Physica Status Solidi: Rapid Research Letters
DOI: 10.1002/pssr.201308115

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