Passivation of aluminium-n + silicon contacts for solar cells by ultrathin Al 2 O3 and SiO 2 dielectric layers
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Bullock, James
Yang, Di
Cuevas, Andres
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Wiley-VCH Verlag GMBH
Abstract
Ultra-thin thermally grown SiO2 and atomic-layer-deposited (ALD) Al2O3 films are trialled as passivating dielectrics for metal-insulator-semiconductor (MIS) type contacts on top of phosphorus diffused regions applicable to high efficiency silicon solar ce
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Physica Status Solidi: Rapid Research Letters
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2037-12-31