Observation of polarity-switchable photoconductivity in III-nitride/MoSx core-shell nanowires
Date
2022-07-19
Authors
Wang, Danhao
Wu, Wentiao
Fang, Shi
Kang, Yang
Wang, Xiaoning
Hu, Wei
Yu, Huabin
Zhang, Haochen
Liu, Xin
Luo, Yuanmin
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Nature Publishing Group UK
Abstract
III–V semiconductor nanowires are indispensable building blocks for nanoscale electronic and optoelectronic devices.
However, solely relying on their intrinsic physical and material properties sometimes limits device functionalities to
meet the increasing demands in versatile and complex electronic world. By leveraging the distinctive nature of the
one-dimensional geometry and large surface-to-volume ratio of the nanowires, new properties can be attained
through monolithic integration of conventional nanowires with other easy-synthesized functional materials. Herein,
we combine high-crystal-quality III-nitride nanowires with amorphous molybdenum sulfides (a-MoSx) to construct IIInitride/a-MoSx core-shell nanostructures. Upon light illumination, such nanostructures exhibit striking spectrally
distinctive photodetection characteristic in photoelectrochemical environment, demonstrating a negative
photoresponsivity of −100.42 mA W−1 under 254 nm illumination, and a positive photoresponsivity of 29.5 mA W−1
under 365 nm illumination. Density functional theory calculations reveal that the successful surface modification of the
nanowires via a-MoSx decoration accelerates the reaction process at the electrolyte/nanowire interface, leading to the
generation of opposite photocurrent signals under different photon illumination. Most importantly, such polarityswitchable photoconductivity can be further tuned for multiple wavelength bands photodetection by simply
adjusting the surrounding environment and/or tailoring the nanowire composition, showing great promise to build
light-wavelength controllable sensing devices in the future.
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Light: Science & Applications
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Journal article
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Open Access
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Creative Commons Attribution 4.0 International License
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