Cuevas, Andres; Tan, Jason
Theoretical modelling of suns-Voc characteristics of silicon solar cells in extreme conditions of surface recombination and illumination intensity predicts departures from the standard I-V characteristic curves. These departures result in ideality factors that can be either higher or lower than unity, depending on the conditions. Analytical proof of such non-idealities is also given in the paper, showing that they are due to the finite diffusivity of carriers towards the surfaces.
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