Analytical and computer modelling of suns-Voc silicon solar cell characteristics
Theoretical modelling of suns-Voc characteristics of silicon solar cells in extreme conditions of surface recombination and illumination intensity predicts departures from the standard I-V characteristic curves. These departures result in ideality factors that can be either higher or lower than unity, depending on the conditions. Analytical proof of such non-idealities is also given in the paper, showing that they are due to the finite diffusivity of carriers towards the surfaces.
|Collections||ANU Research Publications|
|Source:||Solar Energy Materials and Solar Cells|
|01_Cuevas_Analytical_and_computer_2009.pdf||172.74 kB||Adobe PDF||Request a copy|
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