Analytical and computer modelling of suns-Voc silicon solar cell characteristics

Abstract

Theoretical modelling of suns-Voc characteristics of silicon solar cells in extreme conditions of surface recombination and illumination intensity predicts departures from the standard I-V characteristic curves. These departures result in ideality factors that can be either higher or lower than unity, depending on the conditions. Analytical proof of such non-idealities is also given in the paper, showing that they are due to the finite diffusivity of carriers towards the surfaces.