Growth of Stacked InAs/InP Quantum Dot Structures
Date
2006
Authors
Barik, Satyanarayan
Jagadish, Chennupati
Tan, Hark Hoe
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Publisher
Institute of Electrical and Electronics Engineers (IEEE Inc)
Abstract
We report on the growth of self-assembled InAs/InP quantum dots (QDs) on the lattice matched GaInAsP buffer by low pressure Metal Organic Chemical Vapor Deposition and discuss the effects of a thin GaAs interlayer, the QD growth time, and the V/III ratio
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Keywords
Keywords: Arsenic compounds; Chemical reactions; Crystallography; Ecology; Epitaxial growth; Gallium; Gallium alloys; Ion beam assisted deposition; Light emission; Linewidth; Low pressure chemical vapor deposition; Luminescence; Metallizing; Metals; Nanoscience; Na InAs/InP quantum dots; Metal-organic chemical vapor deposition
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Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology
Type
Conference paper
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Restricted until
2037-12-31
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