Quantum Dots-in-a-Well Infrared Photodetectors Grown by MOCVD
Date
2006
Authors
Jolley, Greg
Fu, Lan
Jagadish, Chennupati
Vukmirovic, N
Harrison, P
Tan, Hark Hoe
Journal Title
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Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE Inc)
Abstract
The performance characteristics of InGaAs/GaAs quantum-dots-in-a-well infrared photodetectors grown by MOCVD are reported. A responsivity of 40mA/W at the peak detectivity of 3.2×109cmHz1/2/W has been achieved at a temperature of 77K. In an effort to und
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Keywords
Keywords: Chemical vapor deposition; Infrared detectors; Nanotechnology; Optoelectronic devices; Photodetectors; Quantum electronics; Semiconductor quantum dots; Dots in a well (DWELL); Infrared photo detectors; InGaAs/GaAs; International conferences; Nanoscience a Metal-organic chemical vapor deposition; Quantum dot in frared photodetector
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Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology
Type
Conference paper
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2037-12-31
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