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Quantum Dots-in-a-Well Infrared Photodetectors Grown by MOCVD

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Jolley, Greg; Fu, Lan; Jagadish, Chennupati; Vukmirovic, N; Harrison, P; Tan, Hark Hoe

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The performance characteristics of InGaAs/GaAs quantum-dots-in-a-well infrared photodetectors grown by MOCVD are reported. A responsivity of 40mA/W at the peak detectivity of 3.2×109cmHz1/2/W has been achieved at a temperature of 77K. In an effort to und

CollectionsANU Research Publications
Date published: 2006
Type: Conference paper
URI: http://hdl.handle.net/1885/26361
Source: Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology
DOI: 10.1109/ICONN.2006.340642

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