Quantum Dots-in-a-Well Infrared Photodetectors Grown by MOCVD
The performance characteristics of InGaAs/GaAs quantum-dots-in-a-well infrared photodetectors grown by MOCVD are reported. A responsivity of 40mA/W at the peak detectivity of 3.2×109cmHz1/2/W has been achieved at a temperature of 77K. In an effort to und
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|Source:||Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology|
|01_Jolley_Quantum_Dots-in-a-Well_2006.pdf||1.19 MB||Adobe PDF||Request a copy|
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