Quantum Dots-in-a-Well Infrared Photodetectors Grown by MOCVD

Date

2006

Authors

Jolley, Greg
Fu, Lan
Jagadish, Chennupati
Vukmirovic, N
Harrison, P
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

The performance characteristics of InGaAs/GaAs quantum-dots-in-a-well infrared photodetectors grown by MOCVD are reported. A responsivity of 40mA/W at the peak detectivity of 3.2×109cmHz1/2/W has been achieved at a temperature of 77K. In an effort to und

Description

Keywords

Keywords: Chemical vapor deposition; Infrared detectors; Nanotechnology; Optoelectronic devices; Photodetectors; Quantum electronics; Semiconductor quantum dots; Dots in a well (DWELL); Infrared photo detectors; InGaAs/GaAs; International conferences; Nanoscience a Metal-organic chemical vapor deposition; Quantum dot in frared photodetector

Citation

URI

http://hdl.handle.net/1885/26361

Collections

ANU Research Publications

Source

Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/ICONN.2006.340642

Restricted until

2037-12-31

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01_Jolley_Quantum_Dots-in-a-Well_2006.pdf (1.16 MB)

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