Imaging and modelling the internal gettering of interstitial iron by grain boundaries in multicrystalline silicon
Date
2012
Authors
Liu, An Yao
Walters, Daniel
Phang, Sieu Pheng
MacDonald, Daniel
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Publisher
Curran Associates, Inc.
Abstract
In this paper a simple one-dimensional diffusion-capture model is used to effectively characterise the reduction in interstitial Fe concentrations near grain boundaries in multicrystalline silicon by two fitting parameters: the diffusion length of Fe atoms and the gettering velocity at the grain boundary. The measurements are achieved by photoluminescence images taken before and after dissociating FeB pairs in silicon. The measurement artefacts of lateral photon scattering and lateral carrier diffusion are discussed. The method and the model are verified by a multicrystalline silicon wafer annealed at low temperatures which are known to result in diffusion-limited internal gettering of interstitial Fe.
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Keywords
Keywords: Carrier diffusions; Diffusion length; Diffusion limited; Fe atoms; Fitting parameters; Gettering; Internal gettering; Interstitial iron; Low temperatures; Multi-crystalline silicon; Multicrystalline silicon wafers; Photoluminescence images; Photon scatter gettering; grain boundaries; iron; photoluminescence; silicon
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Source
Proceedings of the 38th IEEE Photovoltaic Specialists Conference (PVSC)
Type
Conference paper
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Restricted until
2037-12-31
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