Skip navigation
Skip navigation

Quantification of Sheet Resistance in Boron-Diffused Silicon Using Micro-Photoluminescence Spectroscopy at Room Temperature

Nguyen, Hieu; Johnston, Steve; Paduthol, Appu; Harvey, Steven P; Phang, Sieu Pheng; Samundsett, Christian; Sun, Chang; Yan, Di; Trupke, Thorsten; Al-Jassim, Mowafak M; Macdonald, Daniel


A micro‐photoluminescence‐based technique is presented, to quantify and map sheet resistances of boron‐diffused layers in silicon solar cell precursors with micron‐scale spatial resolution at room temperature. The technique utilizes bandgap narrowing effects in the heavily‐doped layers, yielding a broader photoluminescence spectrum at the long‐wavelength side compared to the spectrum emitted from lightly doped silicon. By choosing an appropriate spectral range as a metric to assess the doping...[Show more]

CollectionsANU Research Publications
Date published: 2017
Type: Journal article
Source: RRL Solar
DOI: 10.1002/solr.201700088


File Description SizeFormat Image
01_Nguyen_Quantification_of_Sheet_2017.pdf2.24 MBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator