Skip navigation
Skip navigation

Quantification of Sheet Resistance in Boron-Diffused Silicon Using Micro-Photoluminescence Spectroscopy at Room Temperature

Nguyen, Hieu; Johnston, Steve; Paduthol, Appu; Harvey, Steven P; Phang, Sieu Pheng; Samundsett, Christian; Sun, Chang; Yan, Di; Trupke, Thorsten; Al-Jassim, Mowafak M; Macdonald, Daniel

Description

A micro‐photoluminescence‐based technique is presented, to quantify and map sheet resistances of boron‐diffused layers in silicon solar cell precursors with micron‐scale spatial resolution at room temperature. The technique utilizes bandgap narrowing effects in the heavily‐doped layers, yielding a broader photoluminescence spectrum at the long‐wavelength side compared to the spectrum emitted from lightly doped silicon. By choosing an appropriate spectral range as a metric to assess the doping...[Show more]

dc.contributor.authorNguyen, Hieu
dc.contributor.authorJohnston, Steve
dc.contributor.authorPaduthol, Appu
dc.contributor.authorHarvey, Steven P
dc.contributor.authorPhang, Sieu Pheng
dc.contributor.authorSamundsett, Christian
dc.contributor.authorSun, Chang
dc.contributor.authorYan, Di
dc.contributor.authorTrupke, Thorsten
dc.contributor.authorAl-Jassim, Mowafak M
dc.contributor.authorMacdonald, Daniel
dc.date.accessioned2021-09-08T03:42:26Z
dc.identifier.issn2367-198X
dc.identifier.urihttp://hdl.handle.net/1885/247422
dc.description.abstractA micro‐photoluminescence‐based technique is presented, to quantify and map sheet resistances of boron‐diffused layers in silicon solar cell precursors with micron‐scale spatial resolution at room temperature. The technique utilizes bandgap narrowing effects in the heavily‐doped layers, yielding a broader photoluminescence spectrum at the long‐wavelength side compared to the spectrum emitted from lightly doped silicon. By choosing an appropriate spectral range as a metric to assess the doping density, the impacts of photon reabsorption on the analysis can be avoided; thus, an accurate characterization of the sheet resistance can be made. This metric is demonstrated to be better representative of the sheet resistance than the surface doping density or the total dopant concentration of the diffused layer. The technique is applied to quantify sheet resistances of 12‐µm‐wide diffused fingers in interdigitated back‐contact solar cell precursors and large diffused areas. The results are confirmed by both 4‐point probe and time‐of‐flight secondary‐ion mass spectrometry measurements. Finally, the practical limitations associated with extending the proposed technique into an imaging mode are presented and explained.
dc.description.sponsorshipThis work has been supported by the Australian Renewable Energy Agency (ARENA) through Research Grant RND009, the US-Australian collaboration fund from the Australian Centre for Advanced Photovoltaics (ACAP), and the U.S. Department of Energy under Contract No. DE-AC36- 08GO28308 with the National Renewable Energy Laboratory (NREL).
dc.format.mimetypeapplication/pdf
dc.language.isoen_AU
dc.publisherWiley
dc.rights© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
dc.sourceRRL Solar
dc.subjectdiffusion
dc.subjectheavily doped silicon
dc.subjectphotoluminescence
dc.subjectsolar cells
dc.subjectspectroscopy
dc.titleQuantification of Sheet Resistance in Boron-Diffused Silicon Using Micro-Photoluminescence Spectroscopy at Room Temperature
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume1
dc.date.issued2017
local.identifier.absfor091204 - Elemental Semiconductors
local.identifier.ariespublicationu4485658xPUB538
local.publisher.urlhttps://www.wiley.com/en-gb
local.type.statusPublished Version
local.contributor.affiliationNguyen, Hieu, College of Engineering and Computer Science, ANU
local.contributor.affiliationJohnston, Steve, National Renewable Energy Laboratory
local.contributor.affiliationPaduthol, Appu, University of New South Wales
local.contributor.affiliationHarvey, Steven P, National Renewable Energy Laboratory
local.contributor.affiliationPhang, Sieu Pheng, College of Engineering and Computer Science, ANU
local.contributor.affiliationSamundsett, Christian, College of Engineering and Computer Science, ANU
local.contributor.affiliationSun, Ryan, College of Engineering and Computer Science, ANU
local.contributor.affiliationYan, Di, College of Engineering and Computer Science, ANU
local.contributor.affiliationTrupke, Thorsten, University of New South Wales
local.contributor.affiliationAl-Jassim, Mowafak M, National Renewable Energy Laboratory
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, ANU
local.description.embargo2099-12-31
local.bibliographicCitation.issue10
local.bibliographicCitation.startpage1700088-1
local.bibliographicCitation.lastpage1700088-7
local.identifier.doi10.1002/solr.201700088
local.identifier.absseo970109 - Expanding Knowledge in Engineering
dc.date.updated2020-11-23T11:00:05Z
local.identifier.thomsonID000417425000011
CollectionsANU Research Publications

Download

File Description SizeFormat Image
01_Nguyen_Quantification_of_Sheet_2017.pdf2.24 MBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator