Morphology of ion irradiation induced nano-porous structures in Ge and Si1-xGex alloys
Date
2017
Authors
Alkhaldi, Huda
Kremer, Felipe
Mota-Santiago, Pablo
Nadzri, Allina
Schauries, Daniel
Kirby, N
Ridgway, Mark
Kluth, Patrick
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American Institute of Physics (AIP)
Abstract
Crystalline Ge and Si1−xGex alloys (x = 0.83, 0.77) of (100) orientation were implanted with 140 keV Ge− ions at fluences between 5 × 1015 to 3 × 1017 ions/cm2, and at temperatures between 23 °C and 200 °C. The energy deposition of the ions leads to the formation of porous structures consisting of columnar pores separated by narrow sidewalls. Their sizes were characterized with transmission electron microscopy, scanning electron microscopy, and small angle x-ray scattering. We show that the pore radius does not depend significantly on the ion fluence above 5 × 1015 ions/cm2, i.e., when the pores have already developed, yet the pore depth increases from 31 to 516 nm with increasing fluence. The sidewall thickness increases slightly with increasing Si content, while both the pore radius and the sidewall thickness increase at elevated implantation temperatures
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Journal of Applied Physics
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Journal article
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