Hierarchal silica nanowire growth via single step annealing
Date
2010
Authors
Shalav, Avi
Elliman, Robert
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE Inc)
Abstract
Branched silica nanowires were grown on silicon substrates using a gold-catalyzed vapor-liquid-solid process in which the substrate was covered with a silicon capping layer. The reduced O2 partial pressure due to the capping layer is shown to result in regions of frustrated nanowire growth. By comparing electron micrographs from different regions, a growth mechanism for the branched nanowires is proposed.
Description
Keywords
Keywords: Active oxidation; Capping layer; Electron micrograph; Growth mechanisms; Nanowire growth; Pea-pod; Secondary growth; Silica nano wires; Silicon substrates; Single-step; Vapor-liquid-solid process; Nanoscience; Silica; Substrates; Nanowires Active oxidation; Nanowires; Pea-pod; Secondary growth; Silica (SiOx)
Citation
Collections
Source
Proceedings of International Conference on Nanoscience and Nanotechnology (ICONN 2010)
Type
Conference paper