Ballistic transport and quantum interference in InSb nanowire devices
Date
2017
Authors
Li, Sen
Huang, Guang-Yao
Guo, Jing-Kun
Kang, Ning
Caroff, Philippe
Xu, Hong-Qi
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Chinese Physical Society
Abstract
An experimental realization of a ballistic superconductor proximitized semiconductor nanowire device is a necessary
step towards engineering topological quantum electronics. Here, we report on ballistic transport in InSb nanowires
grown by molecular-beam epitaxy contacted by superconductor electrodes. At an elevated temperature, clear conductance plateaus are observed at zero magnetic field and in agreement with calculations based on the Landauer formula. At lower temperature, we have observed characteristic Fabry–Perot patterns which confirm the ballistic nature of charge transport. Furthermore, the magnetoconductance measurements in the ballistic regime reveal a periodic variation related to the Fabry–
Perot oscillations. The result can be reasonably explained by taking into account the impact of magnetic field on the phase of ballistic electron’s wave function, which is further verified by our simulation. Our results pave the way for better understanding of the quantum interference effects on the transport properties of InSb nanowires in the ballistic regime as well as developing of novel device for topological quantum computations.
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Chinese Physics B
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Journal article
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2099-12-31
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