Ballistic transport and quantum interference in InSb nanowire devices
An experimental realization of a ballistic superconductor proximitized semiconductor nanowire device is a necessary step towards engineering topological quantum electronics. Here, we report on ballistic transport in InSb nanowires grown by molecular-beam epitaxy contacted by superconductor electrodes. At an elevated temperature, clear conductance plateaus are observed at zero magnetic field and in agreement with calculations based on the Landauer formula. At lower temperature, we have...[Show more]
|Collections||ANU Research Publications|
|Source:||Chinese Physics B|
|01_Li_Ballistic_transport_and_2017.pdf||8.78 MB||Adobe PDF||Request a copy|
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