Carrier dynamics in p-type InGaAs/GaAs quantum dots
In this study we investigate the carrier relaxation dynamics in p-type doped InGaAs/GaAs quantum dots using time-integrated and time-resolved photoluminescence. The experiment shows that while a strong phonon bottleneck is observed in the undoped samples, with a 680 ps rise time of the photoluminescence intensity, the intra-dot relaxation time (31 ps) of the p-type doped samples is reduced significantly due to scattering of photo-excited electrons with the doping-induced holes.
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|Source:||Journal of Materials Science: Materials in Electronics|
|01_Wen_Carrier_dynamics_in_p-type_2007.pdf||172.51 kB||Adobe PDF||Request a copy|
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