Carrier dynamics in p-type InGaAs/GaAs quantum dots
Date
2007
Authors
Wen, X
Dao, Lap Van
Davis, Jeff A
Hannaford, Peter
Mokkapati, Sudha
Jagadish, Chennupati
Tan, Hark Hoe
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Volume Title
Publisher
Springer
Abstract
In this study we investigate the carrier relaxation dynamics in p-type doped InGaAs/GaAs quantum dots using time-integrated and time-resolved photoluminescence. The experiment shows that while a strong phonon bottleneck is observed in the undoped samples, with a 680 ps rise time of the photoluminescence intensity, the intra-dot relaxation time (31 ps) of the p-type doped samples is reduced significantly due to scattering of photo-excited electrons with the doping-induced holes.
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Keywords
Keywords: Carrier relaxation dynamics; Photo-excited electrons; Phonons; Photoexcitation; Photoluminescence; Relaxation time; Semiconducting indium gallium arsenide; Semiconductor quantum dots
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Journal of Materials Science: Materials in Electronics
Type
Journal article
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2037-12-31
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