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Carrier dynamics in p-type InGaAs/GaAs quantum dots

Wen, X; Dao, Lap Van; Davis, Jeff A; Hannaford, Peter; Mokkapati, Sudha; Jagadish, Chennupati; Tan, Hark Hoe


In this study we investigate the carrier relaxation dynamics in p-type doped InGaAs/GaAs quantum dots using time-integrated and time-resolved photoluminescence. The experiment shows that while a strong phonon bottleneck is observed in the undoped samples, with a 680 ps rise time of the photoluminescence intensity, the intra-dot relaxation time (31 ps) of the p-type doped samples is reduced significantly due to scattering of photo-excited electrons with the doping-induced holes.

CollectionsANU Research Publications
Date published: 2007
Type: Journal article
Source: Journal of Materials Science: Materials in Electronics
DOI: 10.1007/s10854-007-9241-5


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