Light and elevated temperature induced degradation in p-type and n-type cast-grown multicrystalline and mono-like silicon
Date
2018
Authors
Sio, Hang Cheong (Kelvin)
Wang, Haitao
Wang, Quanzhi
Sun, Ryan
Chen, Wei
Jin, Hao
Macdonald, Daniel
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
We compare light induced degradation behaviours in lifetime samples and fully fabricated solar cells made from p-type boron-doped high performance multicrystalline silicon, p-type boron-doped mono-like silicon, n-type phosphorus-doped high performance multicrystalline silicon and p-type boron-doped Czochralski-grown silicon. Our results confirm that the degradation in multicrystalline silicon is triggered by the rapid cooling after the firing process. All cast-grown silicon samples subjected to fast cooling show lifetime reduction after light soaking. Interestingly, the degradation rate in n-type multicrystalline silicon is found to be orders of magnitude slower than in p-type multicrystalline silicon, suggesting that the defect formation mechanism could be affected by the positions of the quasi fermi levels.
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Keywords
LID, LeTID, Degradation, Regeneration, Multicrystalline silicon, Mono-like silicon
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Source
Solar Energy Materials and Solar Cells
Type
Journal article
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Restricted until
2099-12-31
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