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The influence of surfaces on the transient terahertz conductivity and electron mobility of GaAs nanowires

Joyce, Hannah Jane; Baig, Sarwat A; Parkinson, Patrick; Davies, Christopher L.; Boland, Jessica L.; Tan, Hoe; Jagadish, Chennupati; Herz, Laura; Johnston, Michael B

Description

Bare unpassivated GaAs nanowires feature relatively high electron mobilities (400-2100 cm2 V-1 s-1) and ultrashort charge carrier lifetimes (1-5 ps) at room temperature. These two properties are highly desirable for high speed optoelectronic devices, including photoreceivers, modulators and switches operating at microwave and terahertz frequencies. When engineering these GaAs nanowire-based devices, it is important to have a quantitative understanding of how the charge carrier mobility and...[Show more]

CollectionsANU Research Publications
Date published: 2017
Type: Journal article
URI: http://hdl.handle.net/1885/218489
Source: Journal of Physics D: Applied Physics
DOI: 10.1088/1361-6463/aa6a8f

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