The influence of surfaces on the transient terahertz conductivity and electron mobility of GaAs nanowires
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Joyce, Hannah Jane; Baig, Sarwat A.; Parkinson, Patrick; Davies, Christopher L.; Boland, Jessica L.; Tan, Hark Hoe; Jagadish, Chennupati; Herz, Laura; Johnston, Michael B.
Description
Bare unpassivated GaAs nanowires feature relatively high electron mobilities (400-2100 cm2 V-1 s-1) and ultrashort charge carrier lifetimes (1-5 ps) at room temperature. These two properties are highly desirable for high speed optoelectronic devices, including photoreceivers, modulators and switches operating at microwave and terahertz frequencies. When engineering these GaAs nanowire-based devices, it is important to have a quantitative understanding of how the charge carrier mobility and...[Show more]
Collections | ANU Research Publications |
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Date published: | 2017 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/218489 |
Source: | Journal of Physics D: Applied Physics |
DOI: | 10.1088/1361-6463/aa6a8f |
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