The influence of surfaces on the transient terahertz conductivity and electron mobility of GaAs nanowires
Bare unpassivated GaAs nanowires feature relatively high electron mobilities (400-2100 cm2 V-1 s-1) and ultrashort charge carrier lifetimes (1-5 ps) at room temperature. These two properties are highly desirable for high speed optoelectronic devices, including photoreceivers, modulators and switches operating at microwave and terahertz frequencies. When engineering these GaAs nanowire-based devices, it is important to have a quantitative understanding of how the charge carrier mobility and...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Physics D: Applied Physics|
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