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HRXRD, AFM and optical study of damage created by swift heavy ion irradiation in GaN epitaxial layers

Sathish, N; Dhamodaran, S; Pathak, AP; Krishna, Ghanashyam; Khan, SA; Avasthi, DK; Pandey, A; Muralidharan, R; Jagadish, Chennupati; Li, G

Description

Epitaxial GaN layers grown by MOCVD on c-plane sapphire substrates are irradiated with 150 MeV Ag ions at a fluence of 5 × 1012 ions/cm2. Samples used in this study are 2 μm thick GaN layers, with and without a thin AlN cap-layer. Surface morphology is

CollectionsANU Research Publications
Date published: 2007
Type: Journal article
URI: http://hdl.handle.net/1885/21374
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/j.nimb.2006.12.060

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