HRXRD, AFM and optical study of damage created by swift heavy ion irradiation in GaN epitaxial layers
Epitaxial GaN layers grown by MOCVD on c-plane sapphire substrates are irradiated with 150 MeV Ag ions at a fluence of 5 × 1012 ions/cm2. Samples used in this study are 2 μm thick GaN layers, with and without a thin AlN cap-layer. Surface morphology is
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
|01_Sathish_HRXRD,_AFM_and_optical_study_2007.pdf||710.6 kB||Adobe PDF||Request a copy|
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