Sathish, N; Dhamodaran, S; Pathak, AP; Krishna, Ghanashyam; Khan, SA; Avasthi, DK; Pandey, A; Muralidharan, R; Jagadish, Chennupati; Li, G
Epitaxial GaN layers grown by MOCVD on c-plane sapphire substrates are irradiated with 150 MeV Ag ions at a fluence of 5 × 1012 ions/cm2. Samples used in this study are 2 μm thick GaN layers, with and without a thin AlN cap-layer. Surface morphology is
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