HRXRD, AFM and optical study of damage created by swift heavy ion irradiation in GaN epitaxial layers
Date
2007
Authors
Sathish, N
Dhamodaran, S
Pathak, AP
Krishna, Ghanashyam
Khan, SA
Avasthi, DK
Pandey, A
Muralidharan, R
Jagadish, Chennupati
Li, G
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Elsevier
Abstract
Epitaxial GaN layers grown by MOCVD on c-plane sapphire substrates are irradiated with 150 MeV Ag ions at a fluence of 5 × 1012 ions/cm2. Samples used in this study are 2 μm thick GaN layers, with and without a thin AlN cap-layer. Surface morphology is
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Keywords
Keywords: Atomic force microscopy; Epitaxial layers; Gallium nitride; Ion bombardment; Metallorganic chemical vapor deposition; X ray diffraction; High resolution X-ray diffraction (HRXRD); Irradiation induced-damages; Residual strain; Heavy ions AFM; HRXRD; Ion irradiation; Optical and GaN
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Nuclear Instruments and Methods in Physics Research: Section B
Type
Journal article
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2037-12-31
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