Profiling As plasma doped Si/SiO2 with molecular ions
Arsenic profiles in plasma doped silicon wafers were traced by scattering of H+ and H+2 ions at medium energies. Two wafers were doped with the same bias, gas pressure, total implanted dose and AsH3 concentration. After implantation, the wafers were submitted to industrial cleaning processes, resulting in the formation of a surface SiO2 layer, and one wafer was subjected to an additional thermal treatment. Scattering spectra of single and molecular ion beams with the same energy per nucleon and...[Show more]
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|Source:||Thin Solid Films|
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