Activation energy for the hydrogenation of iron in p-type crystalline silicon wafers
The rate at which atomic hydrogen from silicon nitride films passivates interstitial iron in crystalline silicon has been measured at various temperatures. Both conventional quartz tube furnace annealing and rapid thermal annealing (RTA) were used to drive the hydrogen into the silicon wafers. The results allow an estimation of the activation energy for the hydrogenation process. For both annealing methods, this energy was found to be much larger than the migration enthalpy of atomic hydrogen...[Show more]
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|Source:||Proceedings of the World Conference on Photovoltaic Energy Conversion 2006|
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