In situ recombination junction between p-Si and TiO2 enables high-efficiency monolithic perovskite/Si tandem cells
Date
2018
Authors
Shen, Heping
Omelchenko, Stefan
Jacobs, Daniel
Yalamanchili, Sisir
Wan, Yimao
Yan, Di
Phang, Sieu Pheng
Duong, The
Wu, Yiliang
Yin, Yanting
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American Association for the Advancement of Science
Abstract
Increasing the power conversion efficiency of silicon (Si) photovoltaics is a key enabler for continued reductions in the cost of solar electricity. Here, we describe a two-terminal perovskite/Si tandem design that increases the Si cell’s output in the simplest possible manner: by placing a perovskite cell directly on top of the Si bottom cell. The advantageous omission of a conventional interlayer eliminates both optical losses and processing steps and is enabled by the low contact resistivity attainable between n-type TiO2 and Si, established here using atomic layer deposition. We fabricated proof-of-concept perovskite/Si tandems on both homojunction and passivating contact heterojunction Si cells to demonstrate the broad applicability of the interlayer-free concept. Stabilized efficiencies of 22.9 and 24.1% were obtained for the homojunction and passivating contact heterojunction tandems, respectively, which could be readily improved by reducing optical losses elsewhere in the device. This work highlights the potential of emerging perovskite photovoltaics to enable low-cost, high-efficiency tandem devices through straightforward integration with commercially relevant Si solar cells.
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Science Advances
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Journal article
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Open Access
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Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC)
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