Effect of Phosphorus Diffusion to the Recombination at the Si-SiO2 Interface
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Jin, Hao; Weber, Klaus; Zhang, Chun
Description
Measurements of the excess carrier lifetime of diffused and undiffused, thermally oxidized silicon samples are used to show that the presence of a phosphorus diffusion results in a modification of the interface defect properties, resulting in significantly higher surface recombination velocity compared to undiffused samples. In addition, for undiffused samples, positive and negative charges are demonstrated to be equally effective at passivating the silicon surface. Both results hold for (100)...[Show more]
dc.contributor.author | Jin, Hao | |
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dc.contributor.author | Weber, Klaus | |
dc.contributor.author | Zhang, Chun | |
dc.date.accessioned | 2015-12-07T22:20:57Z | |
dc.identifier.issn | 1062-7995 | |
dc.identifier.uri | http://hdl.handle.net/1885/19819 | |
dc.description.abstract | Measurements of the excess carrier lifetime of diffused and undiffused, thermally oxidized silicon samples are used to show that the presence of a phosphorus diffusion results in a modification of the interface defect properties, resulting in significantly higher surface recombination velocity compared to undiffused samples. In addition, for undiffused samples, positive and negative charges are demonstrated to be equally effective at passivating the silicon surface. Both results hold for (100) and (111) oriented samples, as well as for samples subjected to various post-oxidation treatments. The results may have practical implications particularly for the design of rear contacted solar cells. | |
dc.publisher | John Wiley & Sons Inc | |
dc.source | Progress in Photovoltaics: Research and Applications | |
dc.subject | Keywords: Interface defects; Negative charge; Oriented sample; Phosphorus diffusion; Post-oxidation; Silicon surfaces; Surface recombination velocities; Surface recombination velocity; Thermally oxidized silicon; Carrier lifetime; Diffusion; Phosphorus; Silicon com Defects; Diffusion; Surface recombination velocity | |
dc.title | Effect of Phosphorus Diffusion to the Recombination at the Si-SiO2 Interface | |
dc.type | Journal article | |
local.description.notes | Imported from ARIES | |
local.identifier.citationvolume | 17 | |
dc.date.issued | 2009 | |
local.identifier.absfor | 090699 - Electrical and Electronic Engineering not elsewhere classified | |
local.identifier.ariespublication | u9606031xPUB9 | |
local.type.status | Published Version | |
local.contributor.affiliation | Jin, Hao, College of Engineering and Computer Science, ANU | |
local.contributor.affiliation | Weber, Klaus, College of Engineering and Computer Science, ANU | |
local.contributor.affiliation | Zhang, Chun, College of Engineering and Computer Science, ANU | |
local.description.embargo | 2037-12-31 | |
local.bibliographicCitation.issue | 3 | |
local.bibliographicCitation.startpage | 177 | |
local.bibliographicCitation.lastpage | 181 | |
local.identifier.doi | 10.1002/pip.870 | |
dc.date.updated | 2016-02-24T12:11:14Z | |
local.identifier.scopusID | 2-s2.0-65549130658 | |
local.identifier.thomsonID | 000265337900003 | |
Collections | ANU Research Publications |
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