Effect of boron on interstitial-related luminescence centers in silicon
Date
2010
Authors
Charnvanichborikarn, Supakit
Villis, Byron
Johnson, Brett
Wong-Leung, Jennifer
McCallum, Jeffrey C.
Williams, James
Jagadish, Chennupati
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics (AIP)
Abstract
Photoluminescence measurements have been used to investigate the optically active defect centers formed by silicon implantation and a subsequent anneal at 275, 400, or 525°C. The presence of boron in p-type silicon is found to produce deleterious effects
Description
Keywords
Keywords: Annealing temperatures; Boron concentrations; Deleterious effects; Extended defect; Initial stages; Interstitial clusters; Lower energies; Luminescence band; Luminescence centers; Optically active defects; P-type silicon; Photoluminescence measurements; B
Citation
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Source
Applied Physics Letters
Type
Journal article