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FTIR analysis of microwave-excited PECVD silicon nitride layers

Cuevas, Andres; Chen, Florence; Tan, Jason; Mackel, Helmut; Winderbaum, Saul; Roth, Kristin

Description

This paper presents infrared absorption (FTIR) measurements of SiN layers and correlates them to their ability to passivate silicon wafer surfaces. The best passivation was obtained for films having a nitrogen to silicon atomic composition in the proximity of N/Si=1.2, together with a high concentration of Si-N bonds (approximately 1×1023 cm-3) and a refractive index in the vicinity of n=2. The total hydrogen concentration in these films remained practically unchanged after a high temperature...[Show more]

dc.contributor.authorCuevas, Andres
dc.contributor.authorChen, Florence
dc.contributor.authorTan, Jason
dc.contributor.authorMackel, Helmut
dc.contributor.authorWinderbaum, Saul
dc.contributor.authorRoth, Kristin
dc.coverage.spatialWaikoloa Hawaii
dc.date.accessioned2015-12-07T22:17:37Z
dc.date.createdMay 8-12 2006
dc.identifier.isbn1424400163
dc.identifier.urihttp://hdl.handle.net/1885/18655
dc.description.abstractThis paper presents infrared absorption (FTIR) measurements of SiN layers and correlates them to their ability to passivate silicon wafer surfaces. The best passivation was obtained for films having a nitrogen to silicon atomic composition in the proximity of N/Si=1.2, together with a high concentration of Si-N bonds (approximately 1×1023 cm-3) and a refractive index in the vicinity of n=2. The total hydrogen concentration in these films remained practically unchanged after a high temperature firing cycle, which indicates a good thermal stability. In contrast, silicon rich layers (higher refractive index and lower Si-N bond density) suffered a large reduction in the total hydrogen content. These results support the suggestion by ECN researchers that the Si-N bond concentration can be a good indicator of the ultimate electronic impact of the SiN layers.
dc.publisherOmniPress
dc.relation.ispartofseriesWorld Conference on Photovoltaic Energy Conversion 2006
dc.sourceProceedings of the World Conference on Photovoltaic Energy Conversion 2006
dc.subjectKeywords: Electronic impact; High temperature firing cycle; Si-N bond concentration; Electric excitation; Fourier transform infrared spectroscopy; Passivation; Refractive index; Silicon wafers; Thin films; Silicon nitride
dc.titleFTIR analysis of microwave-excited PECVD silicon nitride layers
dc.typeConference paper
local.description.notesImported from ARIES
local.description.refereedYes
dc.date.issued2006
local.identifier.absfor091299 - Materials Engineering not elsewhere classified
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationu4251866xPUB5
local.type.statusPublished Version
local.contributor.affiliationCuevas, Andres, College of Engineering and Computer Science, ANU
local.contributor.affiliationChen, Florence, University of New South Wales
local.contributor.affiliationTan, Jason, College of Engineering and Computer Science, ANU
local.contributor.affiliationMackel, Helmut, College of Engineering and Computer Science, ANU
local.contributor.affiliationWinderbaum, Saul, BP Solar
local.contributor.affiliationRoth, Kristin, Roth & Rau AG
local.description.embargo2037-12-31
local.bibliographicCitation.startpage114801151
local.identifier.doi10.1109/WCPEC.2006.279365
local.identifier.absseo850504 - Solar-Photovoltaic Energy
local.identifier.absseo850404 - Solid Oxide Fuel Cells
dc.date.updated2015-12-07T08:10:29Z
local.identifier.scopusID2-s2.0-41749092311
CollectionsANU Research Publications

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