Fabrication of epitaxial CoSi₂ nanowires
Date
2001-08-06
Authors
Kluth, P.
Zhao, Q. T.
Winnerl, S.
Lenk, S.
Mantl, S.
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American Institute of Physics (AIP)
Abstract
We have developed a method for fabricatingepitaxialCoSi₂nanowires using only conventional optical lithography and standard silicon processing steps. This method was successfully applied to ultrathin epitaxialCoSi₂ layers grown on Si(100) and silicon-on-insulator substrates. A nitride mask induces a stress field near its edges into the CoSi₂/Siheterostructure and leads to the separation of the CoSi₂ layer in this region during a rapid thermal oxidation step. A subsequent etching step and a second oxidation generate highly homogenous silicide wires with dimensions down to 50 nm.
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Applied Physics Letters
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