Nonvolatile memories using deep traps formed in HfO₂ by Nb ion implantation
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Choul Kim, Min; Oh Kim, Chang; Taek Oh, Houng; Choi, Suk-Ho; Belay, K.; Elliman, R. G.; Russo, S. P.
Description
We report nonvolatile memories (NVMs) based on deep-energy trap levels formed in HfO₂ by metal ion implantation. A comparison of Nb- and Ta-implanted samples shows that suitable charge-trapping centers are formed in Nb-implanted samples, but not in Ta-implanted samples. This is consistent with density-functional theory calculations which predict that only Nb will form deep-energy levels in the bandgap of HfO₂. Photocurrent spectroscopy exhibits characteristics consistent with one of the trap...[Show more]
Collections | ANU Research Publications |
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Date published: | 2011-03-08 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/16528 |
Source: | Journal of Applied Physics |
DOI: | 10.1063/1.3554444 |
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01_Choul Kim_Nonvolatile_memories_using_2011.pdf | Published Version | 1.38 MB | Adobe PDF |
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