Nanoscale density fluctuations in swift heavy ion irradiated amorphous SiO2
Date
2011-11-23
Authors
Kluth, P
Pakarinen, O. H
Djurabekova, Flyura
Giulian, R
Ridgway, M. C
Byrne, A. P
Nordlund, K
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American Institute of Physics (AIP)
Abstract
We report on the observation of nanoscale density fluctuations in 2 μm thick amorphous SiO₂ layers irradiated with 185 MeV Au ions. At high fluences, in excess of approximately 5 × 10¹² ions/cm², where the surface is completely covered by ion tracks, synchrotron small angle x-ray scattering measurements reveal the existence of a steady state of density fluctuations. In agreement with molecular dynamics simulations, this steady state is consistent with an ion track “annihilation” process, where high-density regions generated in the periphery of new tracks fill in low-density regions located at the center of existing tracks.
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Keywords: Annihilation process; Density fluctuation; Fluences; High-density regions; Ion track; Molecular dynamics simulations; Nano scale; Small angle X-ray scattering; Steady state; Swift heavy ions; Molecular dynamics; Nanotechnology; Silicon compounds
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Source
Journal of Applied Physics
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Journal article
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