Impurity-free seeded crystallization of amorphous silicon by nanoindentation
Date
2011-10-20
Authors
Ruffell, S.
Knights, A. P.
Bradby, J. E.
Williams, J. S.
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American Institute of Physics (AIP)
Abstract
We demonstrate that nanoindents formed in amorphous Si films, with dimensions as small as ∼20 nm, provide a means to seed solid phase crystallization. During post-indentation annealing at ∼600 °C, solid phase crystallization initiates from the indented sites, effectively removing the incubation time for random nucleation in the absence of seeds. The seeded crystallization is studied by optical microscopy, cross-sectional transmission electron microscopy, and electrical characterization via Hall measurements. Full crystallization can be achieved, with improved electrical characteristics attributed to the improved microstructure, using a lower thermal budget. The process is metal contaminant free and allows for selective area crystallization.
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Keywords: Amorphous Si films; Cross sectional transmission electron microscopy; Electrical characteristic; Electrical characterization; Hall measurements; Incubation time; Metal contaminants; Nanoindents; Random nucleation; Seeded crystallization; Selective area cr
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Journal of Applied Physics
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