Impurity-free seeded crystallization of amorphous silicon by nanoindentation
We demonstrate that nanoindents formed in amorphous Si films, with dimensions as small as ∼20 nm, provide a means to seed solid phase crystallization. During post-indentation annealing at ∼600 °C, solid phase crystallization initiates from the indented sites, effectively removing the incubation time for random nucleation in the absence of seeds. The seeded crystallization is studied by optical microscopy, cross-sectional transmission electron microscopy, and electrical characterization via Hall...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Ruffell_Impurity-free_seeded_2011.pdf||Published Version||2.14 MB||Adobe PDF|
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