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Impurity-free seeded crystallization of amorphous silicon by nanoindentation

Ruffell, S.; Knights, A. P.; Bradby, J. E.; Williams, J. S.

Description

We demonstrate that nanoindents formed in amorphous Si films, with dimensions as small as ∼20 nm, provide a means to seed solid phase crystallization. During post-indentation annealing at ∼600 °C, solid phase crystallization initiates from the indented sites, effectively removing the incubation time for random nucleation in the absence of seeds. The seeded crystallization is studied by optical microscopy, cross-sectional transmission electron microscopy, and electrical characterization via Hall...[Show more]

CollectionsANU Research Publications
Date published: 2011-10-20
Type: Journal article
URI: http://hdl.handle.net/1885/16155
Source: Journal of Applied Physics
DOI: 10.1063/1.3647587

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