Skip navigation
Skip navigation

Near-infrared free carrier absorption in heavily doped silicon

Baker-Finch, Simeon; McIntosh, Keith R; Yan, Di; Fong, Kean Chern; Kho, Teng C

Description

Free carrier absorption in heavily doped silicon can have a significant impact on devices operating in the infrared. In the near infrared, the free carrier absorption process can compete with band to band absorption processes, thereby reducing the number of available photons to optoelectronic devices such as solar cells. In this work, we fabricate 18 heavily doped regions by phosphorus and boron diffusion into planar polished silicon wafers; the simple sample structure facilitates accurate and...[Show more]

CollectionsANU Research Publications
Date published: 2014-08-13
Type: Journal article
URI: http://hdl.handle.net/1885/16116
Source: Journal of Applied Physics
DOI: 10.1063/1.4893176

Download

File Description SizeFormat Image
01_Baker-Finch_Near-infrared_free_carrier_2014.pdfPublished Version3.52 MBAdobe PDFThumbnail


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  12 November 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator