Near-infrared free carrier absorption in heavily doped silicon
Free carrier absorption in heavily doped silicon can have a significant impact on devices operating in the infrared. In the near infrared, the free carrier absorption process can compete with band to band absorption processes, thereby reducing the number of available photons to optoelectronic devices such as solar cells. In this work, we fabricate 18 heavily doped regions by phosphorus and boron diffusion into planar polished silicon wafers; the simple sample structure facilitates accurate and...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Baker-Finch_Near-infrared_free_carrier_2014.pdf||Published Version||3.52 MB||Adobe PDF|
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