Effect of boron concentration on recombination at the p-Si–Al2O3 interface
Date
2014-03-07
Authors
Black, Lachlan E.
Allen, Thomas
McIntosh, Keith R.
Cuevas, Andres
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American Institute of Physics (AIP)
Abstract
We examine the surface passivation properties of Al₂O₃ deposited on boron-doped planar <100> crystalline silicon surfaces as a function of the boron concentration. Both uniformly doped and diffused surfaces are studied, with surface boron concentrations ranging from 9.2 × 10¹⁵ to 5.2 × 10¹⁹ cm⁻³. Atmospheric pressure chemical vapor deposition and thermal atomic layer deposition are used to deposit the Al₂O₃ films. The surface recombination rate of each sample is determined from photoconductance measurements together with the measured dopant profiles via numerical simulation, using the latest physical models. These values are compared with calculations based on the interface properties determined from capacitance–voltage and conductance measurements. It is found that the fundamental surface recombination velocity of electrons, Sn 0 , which describes the chemical passivation of the interface, is independent of the surface boron concentration Ns for Ns ≤ 3 × 10¹⁹ cm⁻³, and in excellent agreement with values calculated from the interface state density Dit and capture coefficients cn and cp measured on undiffused boron-doped surfaces. We conclude that the physical properties of the Si– Al₂O₃ interface are independent of the boron dopant concentration over this range.
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Journal of Applied Physics
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