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Effect of boron concentration on recombination at the p-Si–Al2O3 interface

Black, Lachlan E.; Allen, Thomas; McIntosh, Keith R.; Cuevas, Andres

Description

We examine the surface passivation properties of Al₂O₃ deposited on boron-doped planar <100> crystalline silicon surfaces as a function of the boron concentration. Both uniformly doped and diffused surfaces are studied, with surface boron concentrations ranging from 9.2 × 10¹⁵ to 5.2 × 10¹⁹ cm⁻³. Atmospheric pressure chemical vapor deposition and thermal atomic layer deposition are used to deposit the Al₂O₃ films. The surface recombination rate of each sample is determined from...[Show more]

CollectionsANU Research Publications
Date published: 2014-03-07
Type: Journal article
URI: http://hdl.handle.net/1885/16031
Source: Journal of Applied Physics
DOI: 10.1063/1.4867643

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