Effect of boron concentration on recombination at the p-Si–Al2O3 interface
We examine the surface passivation properties of Al₂O₃ deposited on boron-doped planar <100> crystalline silicon surfaces as a function of the boron concentration. Both uniformly doped and diffused surfaces are studied, with surface boron concentrations ranging from 9.2 × 10¹⁵ to 5.2 × 10¹⁹ cm⁻³. Atmospheric pressure chemical vapor deposition and thermal atomic layer deposition are used to deposit the Al₂O₃ films. The surface recombination rate of each sample is determined from...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Black_Effect_of_boron_concentration_2014.pdf||Published Version||859.21 kB||Adobe PDF|
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