Skip navigation
Skip navigation

Effect of boron concentration on recombination at the p-Si–Al2O3 interface

Black, Lachlan E.; Allen, Thomas; McIntosh, Keith R.; Cuevas, Andres


We examine the surface passivation properties of Al₂O₃ deposited on boron-doped planar <100> crystalline silicon surfaces as a function of the boron concentration. Both uniformly doped and diffused surfaces are studied, with surface boron concentrations ranging from 9.2 × 10¹⁵ to 5.2 × 10¹⁹ cm⁻³. Atmospheric pressure chemical vapor deposition and thermal atomic layer deposition are used to deposit the Al₂O₃ films. The surface recombination rate of each sample is determined from...[Show more]

CollectionsANU Research Publications
Date published: 2014-03-07
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.4867643


File Description SizeFormat Image
01_Black_Effect_of_boron_concentration_2014.pdfPublished Version859.21 kBAdobe PDFThumbnail

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator