Effects of well thickness on the spectral properties of In₀.₅Ga₀.₅As/GaAs/Al₀.₂Ga₀.₈As quantum dots-in-a-well infrared photodetectors
We report on the effects of the quantum well(QW) thickness on the spectral response and other characteristics of In₀.₅Ga₀.₅As/GaAs/Al₀.₂Ga₀.₈Asquantum dots-in-a-well infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition. The main device properties are observed to have a strong dependence on the QW parameters.
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Jolley_Effects_of_well_thickness_on_2008.pdf||682.19 kB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.