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Effects of well thickness on the spectral properties of In₀.₅Ga₀.₅As/GaAs/Al₀.₂Ga₀.₈As quantum dots-in-a-well infrared photodetectors

Jolley, G.; Fu, L.; Tan, H. H.; Jagadish, C.


We report on the effects of the quantum well(QW) thickness on the spectral response and other characteristics of In₀.₅Ga₀.₅As/GaAs/Al₀.₂Ga₀.₈Asquantum dots-in-a-well infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition. The main device properties are observed to have a strong dependence on the QW parameters.

CollectionsANU Research Publications
Date published: 2008-05-14
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.2927487


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