Effects of well thickness on the spectral properties of In₀.₅Ga₀.₅As/GaAs/Al₀.₂Ga₀.₈As quantum dots-in-a-well infrared photodetectors
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Jolley, G
Fu, Lan
Jagadish, C.
Tan, Hark Hoe
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American Institute of Physics (AIP)
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We report on the effects of the quantum well(QW) thickness on the spectral response and other characteristics of In₀.₅Ga₀.₅As/GaAs/Al₀.₂Ga₀.₈Asquantum dots-in-a-well infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition. The main device properties are observed to have a strong dependence on the QW parameters.
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Applied Physics Letters
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