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Probing the band structure of InAs/GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy

Lei, W.; Offer, M.; Lorke, A.; Notthoff, C.; Meier, C.; Wibbelhoff, O.; Wieck, A. D.


The band structure of self-assembled InAs quantum dots, embedded in a GaAs matrix, is probed with capacitance-voltage spectroscopy and photoluminescence(PL)spectroscopy. The electron energy levels in the quantum dots with respect to the electron ground state of the wetting layer (WL) are determined from the capacitance-voltage measurements with a linear lever arm approximation. In the region where the linear lever arm approximation is not valid anymore (after the charging of the WL), the...[Show more]

CollectionsANU Research Publications
Date published: 2008-05-15
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.2920439


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