Probing the band structure of InAs/GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy
The band structure of self-assembled InAs quantum dots, embedded in a GaAs matrix, is probed with capacitance-voltage spectroscopy and photoluminescence(PL)spectroscopy. The electron energy levels in the quantum dots with respect to the electron ground state of the wetting layer (WL) are determined from the capacitance-voltage measurements with a linear lever arm approximation. In the region where the linear lever arm approximation is not valid anymore (after the charging of the WL), the...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Lei_Probing_the_band_structure_of_2008.pdf||739.51 kB||Adobe PDF|
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