Hydrogen contamination in Ge-doped SiO[sub 2] thin films prepared by helicon activated reactive evaporation
Germanium-doped silicon oxidethin films were deposited at low temperature by using an improved helicon plasma assisted reactive evaporation technique. The origins of hydrogen contamination in the film were investigated, and were found to be H incorporation during deposition and postdeposition water absorption. The H incorporation during deposition was avoided by using an effective method to eliminate the residual hydrogen present in the depositionsystem. The microstructure, chemical bonds,...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films|
|01_Li_Hydrogen_contamination_in_2003.pdf||802.75 kB||Adobe PDF|
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