Kucheyev, S. O.; Williams, J. S.; Titov, A. I.; Li, G.; Jagadish, C.
Damage accumulation in wurtzite GaN films bombarded with 0.5 MeV Bi₁ and 1 MeV Bi₂ ions (the so-called molecular effect) is studied by Rutherford backscattering/channeling spectrometry. Results show that an increase in the density of collision cascades dramatically enhances the level of implantation-produced lattice disorder in GaN. This effect is attributed to (i) an increase in the defect clustering efficiency with increasing density of ion-beam-generated point defects and/or (ii) to...[Show more]
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