Effect of the density of collision cascades on implantation damage in GaN
Damage accumulation in wurtzite GaN films bombarded with 0.5 MeV Bi₁ and 1 MeV Bi₂ ions (the so-called molecular effect) is studied by Rutherford backscattering/channeling spectrometry. Results show that an increase in the density of collision cascades dramatically enhances the level of implantation-produced lattice disorder in GaN. This effect is attributed to (i) an increase in the defect clustering efficiency with increasing density of ion-beam-generated point defects and/or (ii) to...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Kucheyev_Effect_of_the_density_of_2001.pdf||354.22 kB||Adobe PDF|
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