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Effect of the density of collision cascades on implantation damage in GaN

Kucheyev, S. O.; Williams, J. S.; Titov, A. I.; Li, G.; Jagadish, C.

Description

Damage accumulation in wurtzite GaN films bombarded with 0.5 MeV Bi₁ and 1 MeV Bi₂ ions (the so-called molecular effect) is studied by Rutherford backscattering/channeling spectrometry. Results show that an increase in the density of collision cascades dramatically enhances the level of implantation-produced lattice disorder in GaN. This effect is attributed to (i) an increase in the defect clustering efficiency with increasing density of ion-beam-generated point defects and/or (ii) to...[Show more]

CollectionsANU Research Publications
Date published: 2001-04-30
Type: Journal article
URI: http://hdl.handle.net/1885/15889
Source: Applied Physics Letters
DOI: 10.1063/1.1369149

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