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Epitaxially grown GaAsN random laser

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Sun, B. Q.; Gal, M.; Gao, Q.; Jagadish, C.; Puzzer, T.; Ouyang, L.; Zou, J.; Tan, Hark Hoe

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We have studied the photoluminescence properties of as-grown GaAs₁ˍₓNₓepitaxial layers grown on GaAs containing 0.6%, 1.77%, and 2.8% nitrogen. We found laser emission from thick (d>200 nm) GaAs₀.₉₇₂N₀.₀₂₈ layers exhibiting the characteristic lasing properties of random lasers. This is unusual because random lasers have so far only been associated with highly disordered or random media. We believe that high gain in combination with structural inhomogeneities that are evident in these...[Show more]

dc.contributor.authorSun, B. Q.
dc.contributor.authorGal, M.
dc.contributor.authorGao, Q.
dc.contributor.authorJagadish, C.
dc.contributor.authorPuzzer, T.
dc.contributor.authorOuyang, L.
dc.contributor.authorZou, J.
dc.contributor.authorTan, Hark Hoe
dc.date.accessioned2015-10-09T00:59:44Z
dc.date.available2015-10-09T00:59:44Z
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/1885/15831
dc.description.abstractWe have studied the photoluminescence properties of as-grown GaAs₁ˍₓNₓepitaxial layers grown on GaAs containing 0.6%, 1.77%, and 2.8% nitrogen. We found laser emission from thick (d>200 nm) GaAs₀.₉₇₂N₀.₀₂₈ layers exhibiting the characteristic lasing properties of random lasers. This is unusual because random lasers have so far only been associated with highly disordered or random media. We believe that high gain in combination with structural inhomogeneities that are evident in these GaAs₀.₉₇₂N₀.₀₂₈ layers, can explain the random lasing in such epitaxial layers.
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 8/10/15). Copyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.1568533
dc.sourceJournal of Applied Physics
dc.subjectKeywords: Epitaxial growth; Gallium alloys; Molecular structure; Nitrogen; Photoluminescence; Random lasers; Lasers
dc.titleEpitaxially grown GaAsN random laser
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume93
dc.date.issued2003-05-15
local.identifier.absfor020501
local.identifier.ariespublicationMigratedxPub15979
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationSun, B Q, University of New South Wales, Australia
local.contributor.affiliationGal, Michael, University of New South Wales, Australia
local.contributor.affiliationGao, Qiang, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationPuzzer, T, University of New South Wales, Australia
local.contributor.affiliationOuyang, L, University of Sydney, Australia
local.contributor.affiliationZou, Jin, University of Queensland, Australia
local.bibliographicCitation.issue10
local.bibliographicCitation.startpage5855
local.bibliographicCitation.lastpage5858
local.identifier.doi10.1063/1.1568533
dc.date.updated2015-12-12T08:18:23Z
local.identifier.scopusID2-s2.0-0037636607
CollectionsANU Research Publications

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