Epitaxially grown GaAsN random laser
Date
2003-05-15
Authors
Sun, B. Q.
Gal, M.
Gao, Q.
Jagadish, C.
Puzzer, T.
Ouyang, L.
Zou, J.
Tan, Hark Hoe
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American Institute of Physics (AIP)
Abstract
We have studied the photoluminescence properties of as-grown GaAs₁ˍₓNₓepitaxial layers grown on GaAs containing 0.6%, 1.77%, and 2.8% nitrogen. We found laser emission from thick (d>200 nm) GaAs₀.₉₇₂N₀.₀₂₈ layers exhibiting the characteristic lasing properties of random lasers. This is unusual because random lasers have so far only been associated with highly disordered or random media. We believe that high gain in combination with structural inhomogeneities that are evident in these GaAs₀.₉₇₂N₀.₀₂₈ layers, can explain the random lasing in such epitaxial layers.
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Keywords
Keywords: Epitaxial growth; Gallium alloys; Molecular structure; Nitrogen; Photoluminescence; Random lasers; Lasers
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Source
Journal of Applied Physics
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Journal article
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