Implantation-induced electrical isolation of GaAsN epilayers grown by metalorganic chemical vapor deposition
Date
2003-10-20
Authors
Gao, Q.
Deenapanray, P. N. K.
Jagadish, C.
Tan, Hark Hoe
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics
Abstract
The electrical isolation of p-type GaAs₁ˍₓNₓ epilayers (x=0.6%, 1.4%, and 2.3%) produced by H, Li, C, or O ion implantation and its thermal stability in nominally undoped GaAs₀.₉₈₆N₀.₀₁₄ epilayers were investigated. Results show that the sheet resistance of p-type GaAsN layers can be increased by about five or six orders of magnitude by ion implantation and the threshold fluence (Fth) to convert a conductive layer to a highly resistive one depends on the original free carrier concentration and the number of implantation-generated atomic displacements, and does not depend on the nitrogen content. The thermal stability of electrical isolation in GaAsN depends on the ratio of the final fluence to the threshold fluence. The electrical isolation can be preserved up to 550 °C when the accumulated fluence is above 3.3 Fth.
Description
Keywords
Keywords: Carrier concentration; Ion implantation; Metallorganic chemical vapor deposition; Rapid thermal annealing; Thermodynamic stability; Electrical isolation; Semiconducting gallium arsenide
Citation
Collections
Source
Applied Physics Letters
Type
Journal article
Book Title
Entity type
Access Statement
License Rights
Restricted until
Downloads
File
Description