Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon
Date
2010-03-22
Authors
Plissard, S.
Dick, K. A.
Wallart, X.
Caroff, P.
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics
Abstract
Growth of GaAs/GaAsSb heterostructurenanowires on silicon without the need for gold seed particles is presented. A high vertical yield of GaAsnanowires is first obtained, and then GaAsₓSb₁ˍₓ segments are successfully grown axially in these nanowires. GaAsSb can also be integrated as a shell around the GaAs core. Finally, two GaAsSb segments are grown inside a GaAsnanowire and passivated using an AlₓGa₁ˍₓAs shell. It is found that no stacking faults or twin planes occur in the GaAsSb segments.
Description
Keywords
Keywords: GaAs; Gold seeds; Heterostructures; Twin planes; Gallium alloys; Gallium arsenide; Nanowires; Stacking faults; Semiconducting gallium
Citation
Collections
Source
Applied Physics Letters
Type
Journal article
Book Title
Entity type
Access Statement
License Rights
Restricted until
Downloads
File
Description
Published Version