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Empirical determination of the energy band gap narrowing in highly doped n+ silicon

Yan, Di; Cuevas, Andres


Highly doped regions in silicon devices should be analyzed using Fermi-Dirac statistics, taking into account energy band gap narrowing (BGN). An empirical expression for the BGN as a function of dopant concentration is derived here by matching the modeled and measured thermal recombination current densities J0 of a broad range of n+ dopant concentration profiles prepared by phosphorus diffusion. The analysis is repeated with Boltzmann statistics in order to determine a second empirical...[Show more]

CollectionsANU Research Publications
Date published: 2013
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.4816694


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