Empirical determination of the energy band gap narrowing in highly doped n+ silicon
Highly doped regions in silicon devices should be analyzed using Fermi-Dirac statistics, taking into account energy band gap narrowing (BGN). An empirical expression for the BGN as a function of dopant concentration is derived here by matching the modeled and measured thermal recombination current densities J0 of a broad range of n+ dopant concentration profiles prepared by phosphorus diffusion. The analysis is repeated with Boltzmann statistics in order to determine a second empirical...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Yan_Empirical_determination_of_the_2013.pdf||Published Version||952.32 kB||Adobe PDF|
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