Empirical determination of the energy band gap narrowing in highly doped n+ silicon
Date
2013
Authors
Yan, Di
Cuevas, Andres
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics
Abstract
Highly doped regions in silicon devices should be analyzed using Fermi-Dirac statistics, taking into account energy band gap narrowing (BGN). An empirical expression for the BGN as a function of dopant concentration is derived here by matching the modeled and measured thermal recombination current densities J0 of a broad range of n+ dopant concentration profiles prepared by phosphorus diffusion. The analysis is repeated with Boltzmann statistics in order to determine a second empirical expression for the apparent energy band gap narrowing, which is found to be in good agreement with previous work.
Description
Keywords
Keywords: Boltzmann statistics; Dopant concentrations; Empirical expression; Energy bandgaps; Fermi-Dirac statistics; Phosphorus diffusion; Recombination currents; Silicon devices; Semiconductor doping; Energy gap
Citation
Collections
Source
Journal of Applied Physics
Type
Journal article
Book Title
Entity type
Access Statement
License Rights
Restricted until
Downloads
File
Description
Published Version